Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.cap.2005.11.028
Title: Synthesis of GaN nanowires on gold-coated substrates by pulsed laser ablation
Authors: Ng, D.K.T.
Tan, L.S. 
Hong, M.H. 
Keywords: Gallium nitride
Laser ablation
Nanowire
Issue Date: Jun-2006
Source: Ng, D.K.T.,Tan, L.S.,Hong, M.H. (2006-06). Synthesis of GaN nanowires on gold-coated substrates by pulsed laser ablation. Current Applied Physics 6 (3) : 403-406. ScholarBank@NUS Repository. https://doi.org/10.1016/j.cap.2005.11.028
Abstract: GaN nanowires were grown on gold-coated sapphire substrates by pulsed laser ablation of a target of GaN powder in low-pressure nitrogen gas. The laser ablation induced Ga and N plasma directly towards the substrate to initialize the vapor-liquid-solid (VLS) growth mechanism. The morphological and structural properties of the GaN nanowires were studied using scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The nanowires formed crystalline and have lengths from 300 to 500 nm with diameters of around 50 nm. The tips of the nanowires were observed to be more conducting which further confirmed the VLS growth mechanism. In addition, the electrical properties of these nanowires were also examined. © 2005 Elsevier B.V. All rights reserved.
Source Title: Current Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/57584
ISSN: 15671739
DOI: 10.1016/j.cap.2005.11.028
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