Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3010303
Title: Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment
Authors: Chin, H.-C.
Wang, B.
Lim, P.-C.
Tang, L.-J.
Tung, C.-H.
Yeo, Y.-C. 
Issue Date: 2008
Source: Chin, H.-C., Wang, B., Lim, P.-C., Tang, L.-J., Tung, C.-H., Yeo, Y.-C. (2008). Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment. Journal of Applied Physics 104 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3010303
Abstract: A study of the surface passivation of strained InGaAs using vacuum annealing and silane (SiH4) passivation was reported for the first time. X-ray photoelectron spectroscopy reveals the elimination of As-O bond after vacuum annealing and SiH4 surface passivation. Vacuum annealing eliminated poor quality native oxide on InGaAs surface, while a thin silicon interfacial layer was formed by SiH4 treatment, therefore effectively preventing the InGaAs surface from exposure to an oxidizing ambient during high- k dielectric deposition. Transmission electron micrograph confirmed the existence of a thin oxidized silicon layer between high- k dielectric and InGaAs. By incorporating this surface technology during gate stack formation, TaN/HfAlO/InGaAs metal-oxide-semiconductor capacitors demonstrate superior C-V characteristics with negligible frequency dispersion, small hysteresis, and interface state density as low as (3.5× 1011) - (5.0× 1011) cm-2 eV-1. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/57540
ISSN: 00218979
DOI: 10.1063/1.3010303
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