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https://doi.org/10.1016/j.tsf.2004.05.051
| Title: | Study of leakage mechanisms of the copper/Black Diamond™ damascene process | Authors: | Yiang, K.Y. Guo, Q. Yoo, W.J. Krishnamoorthy, A. |
Keywords: | Conduction mechanisms Interconnects Low-k |
Issue Date: | Sep-2004 | Citation: | Yiang, K.Y., Guo, Q., Yoo, W.J., Krishnamoorthy, A. (2004-09). Study of leakage mechanisms of the copper/Black Diamond™ damascene process. Thin Solid Films 462-463 (SPEC. ISS.) : 330-333. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.051 | Abstract: | The conduction mechanisms in as-deposited Black Diamond™ film and integrated Cu/Black Diamond™ damascene structures were investigated. The as-deposited film exhibits Schottky emission from low up to breakdown fields. In the integrated structure, however, Schottky emission dominates at low fields (0.2 to 1.4 MV/cm) and Poole-Frenkel emission dominates at high fields (>1.4 MV/cm). The manifestation of Poole-Frenkel emission in the integrated structure and its absence in the as-deposited film indicate the generation of bulk dielectric traps during the damascene fabrication process. © 2004 Elsevier B.V. All rights reserved. | Source Title: | Thin Solid Films | URI: | http://scholarbank.nus.edu.sg/handle/10635/57538 | ISSN: | 00406090 | DOI: | 10.1016/j.tsf.2004.05.051 |
| Appears in Collections: | Staff Publications |
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