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|Title:||Study of leakage mechanisms of the copper/Black Diamond™ damascene process|
|Source:||Yiang, K.Y., Guo, Q., Yoo, W.J., Krishnamoorthy, A. (2004-09). Study of leakage mechanisms of the copper/Black Diamond™ damascene process. Thin Solid Films 462-463 (SPEC. ISS.) : 330-333. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.051|
|Abstract:||The conduction mechanisms in as-deposited Black Diamond™ film and integrated Cu/Black Diamond™ damascene structures were investigated. The as-deposited film exhibits Schottky emission from low up to breakdown fields. In the integrated structure, however, Schottky emission dominates at low fields (0.2 to 1.4 MV/cm) and Poole-Frenkel emission dominates at high fields (>1.4 MV/cm). The manifestation of Poole-Frenkel emission in the integrated structure and its absence in the as-deposited film indicate the generation of bulk dielectric traps during the damascene fabrication process. © 2004 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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