Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.051
Title: Study of leakage mechanisms of the copper/Black Diamond™ damascene process
Authors: Yiang, K.Y.
Guo, Q.
Yoo, W.J. 
Krishnamoorthy, A.
Keywords: Conduction mechanisms
Interconnects
Low-k
Issue Date: Sep-2004
Source: Yiang, K.Y., Guo, Q., Yoo, W.J., Krishnamoorthy, A. (2004-09). Study of leakage mechanisms of the copper/Black Diamond™ damascene process. Thin Solid Films 462-463 (SPEC. ISS.) : 330-333. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.051
Abstract: The conduction mechanisms in as-deposited Black Diamond™ film and integrated Cu/Black Diamond™ damascene structures were investigated. The as-deposited film exhibits Schottky emission from low up to breakdown fields. In the integrated structure, however, Schottky emission dominates at low fields (0.2 to 1.4 MV/cm) and Poole-Frenkel emission dominates at high fields (>1.4 MV/cm). The manifestation of Poole-Frenkel emission in the integrated structure and its absence in the as-deposited film indicate the generation of bulk dielectric traps during the damascene fabrication process. © 2004 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/57538
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.051
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