Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2776855
Title: Stability of photovoltage and trap of light-induced charges in ferroelectric W O3 -doped (Pb0.97 La0.03) (Zr0.52 Ti0.48) O3 thin films
Authors: Qin, M.
Yao, K.
Liang, Y.C. 
Gan, B.K.
Issue Date: 2007
Source: Qin, M., Yao, K., Liang, Y.C., Gan, B.K. (2007). Stability of photovoltage and trap of light-induced charges in ferroelectric W O3 -doped (Pb0.97 La0.03) (Zr0.52 Ti0.48) O3 thin films. Applied Physics Letters 91 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2776855
Abstract: The stability of photovoltage in W O3 -doped (Pb0.97 La0.03) (Zr0.52 Ti0.48) O3 (PLWZT) ferroelectric thin films was investigated. For in-plane polarized configuration, with a greatly enhanced electrode gap, the reduction ratio of photovoltage during multicycle UV illumination was significantly smaller and stability of photovoltage was greatly improved over the sandwich capacitor configuration. The ferroelectric-metal interfacial effects including Schottky barriers and polarization screening due to the trap of photoinduced charges at interfaces were found to determine the magnitude, stability, and even the polarity of the photovoltage, particularly for the electrode-sandwiched PLWZT thin films. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57503
ISSN: 00036951
DOI: 10.1063/1.2776855
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

38
checked on Dec 14, 2017

WEB OF SCIENCETM
Citations

33
checked on Nov 16, 2017

Page view(s)

38
checked on Dec 17, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.