Please use this identifier to cite or link to this item:
|Title:||Stability of photovoltage and trap of light-induced charges in ferroelectric W O3 -doped (Pb0.97 La0.03) (Zr0.52 Ti0.48) O3 thin films|
|Source:||Qin, M., Yao, K., Liang, Y.C., Gan, B.K. (2007). Stability of photovoltage and trap of light-induced charges in ferroelectric W O3 -doped (Pb0.97 La0.03) (Zr0.52 Ti0.48) O3 thin films. Applied Physics Letters 91 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2776855|
|Abstract:||The stability of photovoltage in W O3 -doped (Pb0.97 La0.03) (Zr0.52 Ti0.48) O3 (PLWZT) ferroelectric thin films was investigated. For in-plane polarized configuration, with a greatly enhanced electrode gap, the reduction ratio of photovoltage during multicycle UV illumination was significantly smaller and stability of photovoltage was greatly improved over the sandwich capacitor configuration. The ferroelectric-metal interfacial effects including Schottky barriers and polarization screening due to the trap of photoinduced charges at interfaces were found to determine the magnitude, stability, and even the polarity of the photovoltage, particularly for the electrode-sandwiched PLWZT thin films. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 14, 2017
WEB OF SCIENCETM
checked on Nov 16, 2017
checked on Dec 17, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.