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|Title:||Silicon nanowire forthermoelectric applications: Effects of contact resistance|
|Keywords:||Electrical contact resistance|
|Citation:||Li, Y.,Buddharaju, K.,Singh, N.,Lo, G.Q.,Lee, S.J. (2011-09). Silicon nanowire forthermoelectric applications: Effects of contact resistance. World Academy of Science, Engineering and Technology 81 : 642-645. ScholarBank@NUS Repository.|
|Abstract:||Silicon nanowire (SiNW) based thermoelectric device (TED) has potential applications in areas such as chip level cooling/ energy harvesting. It is a great challenge however, to assemble an efficient device with these SiNW. The presence of parasitic in the form of interfacial electrical resistance will have a significant impact on the performance of the TED. In this work, we explore the effect of the electrical contact resistance on the performance of a TED. Numerical simulations are performed on SiNW to investigate such effects on its cooling performance. Intrinsically, SiNW individually without the unwanted parasitic effect has excellent cooling power density. However, the cooling effect is undermined with the contribution of the electrical contact resistance.|
|Source Title:||World Academy of Science, Engineering and Technology|
|Appears in Collections:||Staff Publications|
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