Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1846952
Title: Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory application
Authors: Tan, Z.
Samanta, S.K. 
Yoo, W.J. 
Lee, S. 
Issue Date: Jan-2005
Source: Tan, Z., Samanta, S.K., Yoo, W.J., Lee, S. (2005-01). Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory application. Applied Physics Letters 86 (1) : 013107-1. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1846952
Abstract: We demonstrate memory property using Ni nanocrystals with mean diameter of 9 nm embedded in HfO2 high- k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5 nm HfO2 after high temperature annealing above 800 °C in N2. However, the diffusion is suppressed by N incorporation into HfO2 by NH3 annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO2. An additional counterclockwise hysteresis of 2.1 V due to the charge trapping properties of the Ni nanocrystals was observed from a ±5 V sweep during capacitance-voltage electrical measurement. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57361
ISSN: 00036951
DOI: 10.1063/1.1846952
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