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|Title:||Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory application|
|Citation:||Tan, Z., Samanta, S.K., Yoo, W.J., Lee, S. (2005-01). Self-assembly of Ni nanocrystals on HfO2 and N -assisted Ni confinement for nonvolatile memory application. Applied Physics Letters 86 (1) : 013107-1. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1846952|
|Abstract:||We demonstrate memory property using Ni nanocrystals with mean diameter of 9 nm embedded in HfO2 high- k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5 nm HfO2 after high temperature annealing above 800 °C in N2. However, the diffusion is suppressed by N incorporation into HfO2 by NH3 annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO2. An additional counterclockwise hysteresis of 2.1 V due to the charge trapping properties of the Ni nanocrystals was observed from a ±5 V sweep during capacitance-voltage electrical measurement. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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