Please use this identifier to cite or link to this item:
|Title:||Schottky barrier height tuning of silicide on Si1-x Cx|
|Citation:||Sinha, M., Chor, E.F., Tan, C.F. (2007). Schottky barrier height tuning of silicide on Si1-x Cx. Applied Physics Letters 91 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2820386|
|Abstract:||We have demonstrated the tuning of Schottky barrier height (SBH) of nickel silicide on silicon-carbon (Si1-x Cx) by varying the carbon mole fraction, x. The SBH (for electron conduction) has been found to decrease with carbon concentration at a rate of ∼6.6 meV / (0.1% carbon). We have achieved ∼27 meV drop in SBH with 0.4% carbon incorporation in Si1-x Cx and shown that 1.3% carbon could lead to more than 85 meV improvement. Furthermore, our results show an avenue to reduce the SBH of rare earth silicide contacts in n -channel Schottky transistors by fabricating them on Si1-x Cx. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 13, 2018
WEB OF SCIENCETM
checked on Jun 11, 2018
checked on Jun 30, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.