Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2820386
Title: Schottky barrier height tuning of silicide on Si1-x Cx
Authors: Sinha, M.
Chor, E.F. 
Tan, C.F.
Issue Date: 2007
Source: Sinha, M., Chor, E.F., Tan, C.F. (2007). Schottky barrier height tuning of silicide on Si1-x Cx. Applied Physics Letters 91 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2820386
Abstract: We have demonstrated the tuning of Schottky barrier height (SBH) of nickel silicide on silicon-carbon (Si1-x Cx) by varying the carbon mole fraction, x. The SBH (for electron conduction) has been found to decrease with carbon concentration at a rate of ∼6.6 meV / (0.1% carbon). We have achieved ∼27 meV drop in SBH with 0.4% carbon incorporation in Si1-x Cx and shown that 1.3% carbon could lead to more than 85 meV improvement. Furthermore, our results show an avenue to reduce the SBH of rare earth silicide contacts in n -channel Schottky transistors by fabricating them on Si1-x Cx. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57340
ISSN: 00036951
DOI: 10.1063/1.2820386
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