Please use this identifier to cite or link to this item: https://doi.org/10.1109/TSM.2002.801380
Title: Resist film uniformity in the microlithography process
Authors: Ho, W.K. 
Lee, L.L.
Tay, A. 
Schaper, C.
Issue Date: Aug-2002
Source: Ho, W.K., Lee, L.L., Tay, A., Schaper, C. (2002-08). Resist film uniformity in the microlithography process. IEEE Transactions on Semiconductor Manufacturing 15 (3) : 323-330. ScholarBank@NUS Repository. https://doi.org/10.1109/TSM.2002.801380
Abstract: With the trends toward smaller feature size, one of the challenge is to control the resist thickness and uniformity to a tight tolerance in order to minimize thin film interference effects on the critical dimensions. In this paper, we propose a new approach to improve resist thickness control and uniformity through the soft-bake process. Using an array of thickness sensors, a multizones bakeplate and a sliding mode control algorithm, the temperature distribution of the bakeplate is manipulated in real-time to reduce the resist thickness nonuniformity. The sliding mode control algorithm is implemented in a cascaded control structure so that the bake temperature is constrained. This is to prevent decomposition of the photoactive compound in the resist. We have experimentally demonstrated an improvement in the resist thickness uniformity across individual wafers and from wafer-to-wafer. The cascaded control structure using a sliding mode control algorithm provides a simpler and faster implementation of the thickness control strategy and makes it more suitable for real-time application. There is about 75 times reduction in the computation time and a resist thickness nonuniformity of less than 10 Å is achieved.
Source Title: IEEE Transactions on Semiconductor Manufacturing
URI: http://scholarbank.nus.edu.sg/handle/10635/57255
ISSN: 08946507
DOI: 10.1109/TSM.2002.801380
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