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|Title:||Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates|
|Citation:||Soh, C.B., Chow, S.Y., Tripathy, S., Chua, S.J. (2008-03-05). Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates. Journal of Physics Condensed Matter 20 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/20/9/095210|
|Abstract:||The high density of threading dislocations, often leading to the formation of inverted hexagonal pits in InGaN/GaN heterostructures on sapphire substrates, lowers the radiative efficiency of light emitting devices. In this study, a cracked AlGaN template has been implemented as a strain-relaxed layer for subsequent growth of InGaN/GaN heterostructures. The detailed electron microscopy and surface topographic analyses show that such a template has led to a reduction of threading dislocation density especially for screw dislocations and V-pits in the overgrown InGaN/GaN layers. The relaxed regrowth of such heterostructures also leads to an improved crystalline quality and a higher In incorporation in InGaN. The improvement in the optical and structural quality of these InGaN/GaN layers is investigated by means of photoluminescence spectroscopy and transmission electron microscopy. © IOP Publishing Ltd.|
|Source Title:||Journal of Physics Condensed Matter|
|Appears in Collections:||Staff Publications|
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