Please use this identifier to cite or link to this item:
Title: Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates
Authors: Soh, C.B.
Chow, S.Y.
Tripathy, S.
Chua, S.J. 
Issue Date: 5-Mar-2008
Citation: Soh, C.B., Chow, S.Y., Tripathy, S., Chua, S.J. (2008-03-05). Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates. Journal of Physics Condensed Matter 20 (9) : -. ScholarBank@NUS Repository.
Abstract: The high density of threading dislocations, often leading to the formation of inverted hexagonal pits in InGaN/GaN heterostructures on sapphire substrates, lowers the radiative efficiency of light emitting devices. In this study, a cracked AlGaN template has been implemented as a strain-relaxed layer for subsequent growth of InGaN/GaN heterostructures. The detailed electron microscopy and surface topographic analyses show that such a template has led to a reduction of threading dislocation density especially for screw dislocations and V-pits in the overgrown InGaN/GaN layers. The relaxed regrowth of such heterostructures also leads to an improved crystalline quality and a higher In incorporation in InGaN. The improvement in the optical and structural quality of these InGaN/GaN layers is investigated by means of photoluminescence spectroscopy and transmission electron microscopy. © IOP Publishing Ltd.
Source Title: Journal of Physics Condensed Matter
ISSN: 09538984
DOI: 10.1088/0953-8984/20/9/095210
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Dec 13, 2018


checked on Dec 5, 2018

Page view(s)

checked on Nov 10, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.