Please use this identifier to cite or link to this item: https://doi.org/9/095210
Title: Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates
Authors: Soh, C.B.
Chow, S.Y.
Tripathy, S.
Chua, S.J. 
Issue Date: 5-Mar-2008
Source: Soh, C.B.,Chow, S.Y.,Tripathy, S.,Chua, S.J. (2008-03-05). Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates. Journal of Physics Condensed Matter 20 (9) : -. ScholarBank@NUS Repository. https://doi.org/9/095210
Abstract: The high density of threading dislocations, often leading to the formation of inverted hexagonal pits in InGaN/GaN heterostructures on sapphire substrates, lowers the radiative efficiency of light emitting devices. In this study, a cracked AlGaN template has been implemented as a strain-relaxed layer for subsequent growth of InGaN/GaN heterostructures. The detailed electron microscopy and surface topographic analyses show that such a template has led to a reduction of threading dislocation density especially for screw dislocations and V-pits in the overgrown InGaN/GaN layers. The relaxed regrowth of such heterostructures also leads to an improved crystalline quality and a higher In incorporation in InGaN. The improvement in the optical and structural quality of these InGaN/GaN layers is investigated by means of photoluminescence spectroscopy and transmission electron microscopy. © IOP Publishing Ltd.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/57229
ISSN: 09538984
DOI: 9/095210
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