Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2798064
Title: Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors
Authors: Toh, E.-H.
Wang, G.H.
Chan, L.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Source: Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C. (2007). Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors. Applied Physics Letters 91 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2798064
Abstract: We explore the improvement of electrical performance of impact-ionization metal-oxide-semiconductor (I-MOS) transistors by the reduction of impact-ionization threshold energy through incorporation of materials with smaller bandgaps. Silicon-germanium (SiGe) I-MOS transistors were demonstrated. The lower bandgap of SiGe, as compared to Si, contributes to lower electron and hole impact-ionization threshold energies, leading to avalanche breakdown at a much reduced source voltage and enhanced device performance. Both n - and p -channel I-MOS devices were fabricated on Si0.60 Ge0.40 -on-insulator substrates using a complementary metal-oxide-semiconductor compatible process flow. Excellent subthreshold swings as low as 5 mV /decade were achieved for the SiGe I-MOS devices. Reduction in breakdown voltage VBD was as large as 1.3 and 1.6 V, respectively, for the n - and p -channel Si0.60 Ge0.40 I-MOS devices. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57225
ISSN: 00036951
DOI: 10.1063/1.2798064
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

11
checked on Dec 7, 2017

WEB OF SCIENCETM
Citations

14
checked on Nov 22, 2017

Page view(s)

19
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.