Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2773637
Title: Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film
Authors: Liu, H.F.
Chua, S.J.
Hu, G.X. 
Gong, H. 
Xiang, N. 
Issue Date: 2007
Source: Liu, H.F., Chua, S.J., Hu, G.X., Gong, H., Xiang, N. (2007). Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film. Journal of Applied Physics 102 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2773637
Abstract: The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [10 1- 0] ZnO (0002) [11 2- 0] Al2 O3 (0002) coexisted with a small amount of ZnO (10 1- 1) and ZnO (10 1- 3) crystals on the Al2 O3 (0001) substrate. The ZnO (10 1- 1) and ZnO (10 1- 3) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 °C improves the crystalline and the photoluminescence more significantly than annealing in air, N2 and O2 ambient; it also tends to convert the crystal from ZnO (10 1- 1) and ZnO (10 1- 3) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects. © 2007 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/57188
ISSN: 00218979
DOI: 10.1063/1.2773637
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