Please use this identifier to cite or link to this item:
|Title:||Pulsed-laser assisted nanopatterning of metallic layers combined with atomic force microscopy|
|Citation:||Huang, S.M., Hong, M.H., Lu, Y.F., Lukỳanchuk, B.S., Song, W.D., Chong, T.C. (2002-02-15). Pulsed-laser assisted nanopatterning of metallic layers combined with atomic force microscopy. Journal of Applied Physics 91 (5) : 3268-3274. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1448882|
|Abstract:||Pulsed-laser assisted nanopatterning of metallic layers on silicon substrates under an atomic force microscope (AFM) tip has been investigated. A 532 nm Nd:YAG pulsed laser with a pulse duration of 7 ns was used. Boron doped silicon tips were used in contact mode. This technique enables processing of structures with a lateral resolution down to 10 nm on the copper layers. Nanopatterns such as pit array and multilines with lateral dimensions between 10 and 60 nm and depths between 1.5 and 7.0 nm have been created. The experimental results and mechanism of the nanostructure formation are discussed. The created features were characterized by AFM, scanning electron microscope and Auger electron spectroscopy. The apparent depth of the created pit has been studied as a function of laser intensity or laser pulse numbers. Dependence of nanoprocessing on the geometry parameters of the tip and on the optical and thermal properties of the processed sample has also been investigated. Thermal expansion of the tip, the field enhancement factor underneath the tip, and the sample surface heating were estimated. It is proposed that field-enhancement mechanism is the dominant reason for this nanoprocessing. © 2002 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 17, 2018
WEB OF SCIENCETM
checked on Oct 31, 2018
checked on Oct 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.