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|Title:||Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing|
Schottky barrier height
|Citation:||Li, B., Chua, S.-J., Nikolai, Y., Wang, L., Sia, E.-K. (2003-04). Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing. Solid-State Electronics 47 (4) : 601-605. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(02)00322-2|
|Abstract:||Electrical properties of Schottky contact of titanium on low boron doped SiGeC have been investigated as a function of annealing temperature. Annealing has been performed at a temperature range of 400-600 °C for 10 min. The Schottky barrier heights were deduced from current-voltage characteristics. Both rapid thermal annealing and bias voltage will lead to a decrease of the Schottky barrier height for Ti/p-SiGeC contact. The decrease of Schottky barrier heights caused by the increase of annealing temperatures is about 3.5-5.6 meV per 100 °C between 400 and 600 °C and by the increase of bias voltage is less than 1 meV/V. X-ray diffraction and secondary ion mass spectroscopy measurements were performed and showed that, after annealing at 600 °C for 10 min, the SiGeC peak has shifted a little to the right compared with the Si substrate peak and a slight strain relaxation was occurred in the SiGeC epilayer. © 2003 Published by Elsevier Science Ltd.|
|Source Title:||Solid-State Electronics|
|Appears in Collections:||Staff Publications|
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