Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2165131
Title: Planar Hall effect in orthogonal submicrometer Co wires
Authors: Huang, Y.S.
Wang, C.C. 
Adeyeye, A.O. 
Tripathy, D. 
Issue Date: 2006
Source: Huang, Y.S., Wang, C.C., Adeyeye, A.O., Tripathy, D. (2006). Planar Hall effect in orthogonal submicrometer Co wires. Journal of Applied Physics 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2165131
Abstract: We report on the planar Hall effect (PHE) at the junction of two orthogonal 200-nm-wide Co wires. Both the experimental and simulated PHE curves reveal that the magnetization switching at the junction is strongly associated with the reversal processes of the individual wire. As the orientation of applied field is varied with respect to the easy axes of the wires, the switching field and the direction of the spin rotation at the junction can be well controlled. © 2006 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/57070
ISSN: 00218979
DOI: 10.1063/1.2165131
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