Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4784065
Title: Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
Authors: Goh, K.-H.
Cheng, Y.
Lu Low, K.
Yu Jin Kong, E.
Chia, C.-K.
Toh, E.-H.
Yeo, Y.-C. 
Issue Date: 28-Jan-2013
Source: Goh, K.-H., Cheng, Y., Lu Low, K., Yu Jin Kong, E., Chia, C.-K., Toh, E.-H., Yeo, Y.-C. (2013-01-28). Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate. Journal of Applied Physics 113 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4784065
Abstract: A study on the physical modeling of the growth of GaAs on Ge fins is reported. Experimental data on selective growth of high-quality gallium arsenide (GaAs) on germanium (Ge) fins with different orientations formed on 10° offcut germanium-on-insulator (GeOI) substrate were used. Extensive physical characterization using secondary electron microscope (SEM) and transmission electron microscope (TEM) was performed to obtain the dependence of the GaAs growth rates on crystallographic directions. Our physical model explains the shapes of GaAs crystals grown on the Ge fins having different in-plane orientations. © 2013 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/57059
ISSN: 00218979
DOI: 10.1063/1.4784065
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