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|Title:||Optical, magnetic, and transport behaviors of Ge1-x Mnx Te ferromagnetic semiconductors grown by molecular-beam epitaxy|
|Citation:||Chen, W.Q., Lim, S.T., Sim, C.H., Bi, J.F., Teo, K.L., Liew, T., Chong, T.C. (2008). Optical, magnetic, and transport behaviors of Ge1-x Mnx Te ferromagnetic semiconductors grown by molecular-beam epitaxy. Journal of Applied Physics 104 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2980276|
|Abstract:||The optical, magnetic, and transport behaviors of Ge1-x Mnx Te (x=0.24 and 0.55) grown by solid-source molecular-beam epitaxy are investigated. X-ray diffraction shows that Ge1-x Mnx Te crystallizes in rocksalt structure. The temperature-dependent magnetization (M-T) for x=0.55 sample gives a Curie paramagnetic temperature of θp ∼180 K, which is consistent with the temperature-dependent resistivity ρ (T) measurement. Anomalous Hall effect is clearly observed in the samples and can be attributed to extrinsic skew scattering based on the scaling relationship of ρ xy ρ xx 1.06. The magnetoresistance of Ge1-x Mnx Te is isotropic and displays a clear hysterestic loop at low temperature, which resembles that of giant-magnetoresistance granular system in solids. © 2008 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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