Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2980276
Title: Optical, magnetic, and transport behaviors of Ge1-x Mnx Te ferromagnetic semiconductors grown by molecular-beam epitaxy
Authors: Chen, W.Q.
Lim, S.T. 
Sim, C.H.
Bi, J.F. 
Teo, K.L. 
Liew, T. 
Chong, T.C. 
Issue Date: 2008
Source: Chen, W.Q., Lim, S.T., Sim, C.H., Bi, J.F., Teo, K.L., Liew, T., Chong, T.C. (2008). Optical, magnetic, and transport behaviors of Ge1-x Mnx Te ferromagnetic semiconductors grown by molecular-beam epitaxy. Journal of Applied Physics 104 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2980276
Abstract: The optical, magnetic, and transport behaviors of Ge1-x Mnx Te (x=0.24 and 0.55) grown by solid-source molecular-beam epitaxy are investigated. X-ray diffraction shows that Ge1-x Mnx Te crystallizes in rocksalt structure. The temperature-dependent magnetization (M-T) for x=0.55 sample gives a Curie paramagnetic temperature of θp ∼180 K, which is consistent with the temperature-dependent resistivity ρ (T) measurement. Anomalous Hall effect is clearly observed in the samples and can be attributed to extrinsic skew scattering based on the scaling relationship of ρ xy ρ xx 1.06. The magnetoresistance of Ge1-x Mnx Te is isotropic and displays a clear hysterestic loop at low temperature, which resembles that of giant-magnetoresistance granular system in solids. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56929
ISSN: 00218979
DOI: 10.1063/1.2980276
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