Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2034497
Title: N-ZnO/n-GaAs Heterostructured white light-emitting diode: Nanoscale interface analysis and electroluminescence studies
Authors: Tan, S.T.
Zhao, J.
Iwan, S.
Sun, X.W.
Tang, X.
Ye, J.
Bosman, M.
Tang, L.
Lo, G.-Q.
Teo, K.L. 
Keywords: Heterostructures
Light-emitting diode (LED)
ZnO
Issue Date: Jan-2010
Source: Tan, S.T.,Zhao, J.,Iwan, S.,Sun, X.W.,Tang, X.,Ye, J.,Bosman, M.,Tang, L.,Lo, G.-Q.,Teo, K.L. (2010-01). N-ZnO/n-GaAs Heterostructured white light-emitting diode: Nanoscale interface analysis and electroluminescence studies. IEEE Transactions on Electron Devices 57 (1) : 129-133. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2034497
Abstract: n-ZnO/n-GaAs heterostructured light-emitting diodes have been fabricated by a low-cost ultrasonic spray pyrolysis technique. Nanoscale interface analysis was carried out with scanning transmission electron microscopy. An ∼8.6-nmthick amorphous GaAsZnInO was found in the n-ZnO/n-GaAs interface. A strong and broad white electroluminescence band centered at ∼525 nm and a weak near-infrared emission peaked at ∼815 nm were observed when n-GaAs was positively biased. The 815-nm emission is believed to be related to the interface layer, and the 525-nm emission is assigned to the recombination of electrons from conduction band to deep-level holes in the ZnO layer. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/56847
ISSN: 00189383
DOI: 10.1109/TED.2009.2034497
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