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|Title:||N-ZnO/n-GaAs Heterostructured white light-emitting diode: Nanoscale interface analysis and electroluminescence studies|
Light-emitting diode (LED)
|Citation:||Tan, S.T., Zhao, J., Iwan, S., Sun, X.W., Tang, X., Ye, J., Bosman, M., Tang, L., Lo, G.-Q., Teo, K.L. (2010-01). N-ZnO/n-GaAs Heterostructured white light-emitting diode: Nanoscale interface analysis and electroluminescence studies. IEEE Transactions on Electron Devices 57 (1) : 129-133. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2034497|
|Abstract:||n-ZnO/n-GaAs heterostructured light-emitting diodes have been fabricated by a low-cost ultrasonic spray pyrolysis technique. Nanoscale interface analysis was carried out with scanning transmission electron microscopy. An ∼8.6-nmthick amorphous GaAsZnInO was found in the n-ZnO/n-GaAs interface. A strong and broad white electroluminescence band centered at ∼525 nm and a weak near-infrared emission peaked at ∼815 nm were observed when n-GaAs was positively biased. The 815-nm emission is believed to be related to the interface layer, and the 525-nm emission is assigned to the recombination of electrons from conduction band to deep-level holes in the ZnO layer. © 2009 IEEE.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
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