Please use this identifier to cite or link to this item: https://doi.org/10.1002/1098-2760(20010220)28:4<278
Title: Novel approach for determining the AlGaAs/GaAs HBT small-signal equivalent circuit elements
Authors: Zhou, T.S.
Ooi, B.L. 
Kooi, P.S. 
Issue Date: 20-Feb-2001
Source: Zhou, T.S.,Ooi, B.L.,Kooi, P.S. (2001-02-20). Novel approach for determining the AlGaAs/GaAs HBT small-signal equivalent circuit elements. Microwave and Optical Technology Letters 28 (4) : 278-282. ScholarBank@NUS Repository. https://doi.org/10.1002/1098-2760(20010220)28:4<278
Abstract: An efficient method for extracting the small-signal model parameters of an HBT transistor is proposed. The strong correlation between the extrinsic and intrinsic HBT model parameters, which can be employed to drastically reduce the search space, is exploited. For the first time in HBT modeling, an explicit equation of the total extrinsic elements, which results in a reduction of the number of unknowns for optimization, is derived. This novel approach can yield a good fit between measured and simulated S-parameters.
Source Title: Microwave and Optical Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56831
ISSN: 08952477
DOI: 10.1002/1098-2760(20010220)28:4<278
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