Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.69.214402
Title: Nano-oxide-layer insertion and specular effects in spin valves: Experiment and theory
Authors: Wang, L.
Qiu, J.J.
McMahon, W.J.
Li, K.B.
Wu, Y.H. 
Issue Date: Jun-2004
Source: Wang, L., Qiu, J.J., McMahon, W.J., Li, K.B., Wu, Y.H. (2004-06). Nano-oxide-layer insertion and specular effects in spin valves: Experiment and theory. Physical Review B - Condensed Matter and Materials Physics 69 (21) : 214402-1. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.69.214402
Abstract: We report a systematic study of NOL (nano-oxide-layer) insertion and specular effects on the giant magnetoresistance (GMR) of single, synthetic, and dual spin valves, using a semiclassical Boltzmann theory. It is confirmed that the GMR ratio is enhanced by NOL insertion inside the pinned layer or after the free layer. The enhancements are primarily due to the contribution of the majority carriers. The NOL insertions inside the inactive layers of spin valves such as the seed, under, and capping layers reduce the GMR ratio. Though introducing a NOL before or after the Cu spacer would, in principle, significantly suppress the GMR ratio due to the blocking effect or the average effect of different spin channels, large positive or negative (inverse) GMR is found by assuming spin-dependent NOL specular reflections. We have also demonstrated that specular reflection, even beyond a capping layer, may result in reduction of GMR. Upon appropriate NOL insertion, the amplitude of curve of GMR versus thickness of individual layer of spin valves may be generally enhanced, but the shape may change, depending on whether the distance of the NOL to the layer is small or large (distance effect). Finally, it is found that most results obtained for the single realistic spin valves are applicable to synthetic and dual spin valves.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56760
ISSN: 01631829
DOI: 10.1103/PhysRevB.69.214402
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