Nanometer metal line fabrication using a ZEP52050 K PMMA bilayer resist by e-beam lithography

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1978893

Title:	Nanometer metal line fabrication using a ZEP52050 K PMMA bilayer resist by e-beam lithography
Authors:	An, L. Zheng, Y. Li, K. Luo, P. Wu, Y.
Issue Date:	2005
Citation:	An, L., Zheng, Y., Li, K., Luo, P., Wu, Y. (2005). Nanometer metal line fabrication using a ZEP52050 K PMMA bilayer resist by e-beam lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (4) : 1603-1606. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1978893
Abstract:	In this work, we propose a bilayer resist system with 50 K poly methylmethacrylate as the bottom layer and ZEP520 as the top layer for lift-off process. By making use of the different dissolution rates in the rinser for the top and bottom layers, it is possible to create an overhang resist pattern suitable for lift-off. In this specific study, a set of process parameters have been optimized to fabricate Cr metal lines with a width of about 70 nm. The process has been used to fabricate nanometer scale magnetic sensors for data storage applications. © 2005 American Vacuum Society.
Source Title:	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI:	http://scholarbank.nus.edu.sg/handle/10635/56759
ISSN:	10711023
DOI:	10.1116/1.1978893
Appears in Collections:	Staff Publications

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