Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3465327
Title: Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires
Authors: Chin, H.-C.
Gong, X.
Ng, T.K.
Loke, W.K.
Wong, C.P.
Shen, Z.
Wicaksono, S.
Yoon, S.F.
Yeo, Y.-C. 
Issue Date: 15-Jul-2010
Source: Chin, H.-C., Gong, X., Ng, T.K., Loke, W.K., Wong, C.P., Shen, Z., Wicaksono, S., Yoon, S.F., Yeo, Y.-C. (2010-07-15). Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires. Journal of Applied Physics 108 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3465327
Abstract: Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using finite-element simulation. It is shown that nanostructures can provide additional substrate compliance for strain relief and therefore contribute to the formation of defect-free GaAs on SiGe. Extensive characterization using scanning electron microscopy and cross-sectional transmission electron microscopy was performed to illustrate the successful growth of GaAs on SiGe nanowire. Raman and Auger electron spectroscopy measurements further confirmed the quality of the GaAs grown and the high growth selectivity of the MEE process. © 2010 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56758
ISSN: 00218979
DOI: 10.1063/1.3465327
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