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|Title:||Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires|
|Citation:||Chin, H.-C., Gong, X., Ng, T.K., Loke, W.K., Wong, C.P., Shen, Z., Wicaksono, S., Yoon, S.F., Yeo, Y.-C. (2010-07-15). Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires. Journal of Applied Physics 108 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3465327|
|Abstract:||Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using finite-element simulation. It is shown that nanostructures can provide additional substrate compliance for strain relief and therefore contribute to the formation of defect-free GaAs on SiGe. Extensive characterization using scanning electron microscopy and cross-sectional transmission electron microscopy was performed to illustrate the successful growth of GaAs on SiGe nanowire. Raman and Auger electron spectroscopy measurements further confirmed the quality of the GaAs grown and the high growth selectivity of the MEE process. © 2010 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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