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|Title:||Monolithic multichannel secondary electron detector for distributed axis electron beam lithography and inspection|
|Authors:||Pickard, D.S. |
|Source:||Pickard, D.S., Kenney, C., Tanimoto, S., Crane, T., Groves, T., Pease, R.F.W. (2007). Monolithic multichannel secondary electron detector for distributed axis electron beam lithography and inspection. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25 (6) : 2277-2283. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2804611|
|Abstract:||The attractiveness of electron beam systems would be greatly enhanced if the throughput could be improved. One approach, described previously by the authors employs a uniform axial magnetic field to focus thousands of electron beams simultaneously [D. S. Pickard, J. Vac. Sci. Technol. B 21, 2709 (2003); T. R. Groves and R. A. Kendall, ibid., 16, 3168 (1998)]. The beamlets never combine to form a common crossover, thereby avoiding the throughput limitations due to space charge blurring. With this approach, one challenge was to fashion a detection scheme that maintains a tight beamlet packing density (250 μm pitch) while minimizing cross-talk between adjacent secondary electron signals, either by crossing trajectories or within the detector. A pin-diode-based detector was investigated as a potential component of the multielement detection scheme for the authors' system. The detector features a two-dimensional array of elements on high resistivity float-zone silicon. The detector attributes that were attractive to their application include modest internal amplification (>5000 at 25 kV), fast response time (measured at <10 ns), ability to be made compact and with dense packed electrodes (<250 μm), low electrode capacitance (<1 pF), and ability for (complementary metal-oxide semiconductor) circuitry to be integrated directly onto the detector array so that low noise amplification of each signal can be performed. This detector requires a retarding field for the primary beam, which accelerates the secondary electrons to energies sufficient to excite a large number of internal secondaries. © 2007 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
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