Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1609638
Title: Modeling of charge quantization and wave function penetration effects in a metal-oxide-semiconductor system with ultrathin gate oxide
Authors: Chim, W.K. 
Zheng, J.X.
Koh, B.H.
Issue Date: 15-Oct-2003
Source: Chim, W.K., Zheng, J.X., Koh, B.H. (2003-10-15). Modeling of charge quantization and wave function penetration effects in a metal-oxide-semiconductor system with ultrathin gate oxide. Journal of Applied Physics 94 (8) : 5273-5277. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1609638
Abstract: Charge quantization and wave function penetration effects in a metal-oxide-semiconductor system with ultrathin gate oxide were investigated. The capacitance-voltage (C-V) results were compared with those obtained from other quantum mechanical (QM) simulators. Results showed that the wave function penetration has a non-negligible effect on the gate capacitance and resulting C-V curves when the oxide thickness decreases to 1 nm and below.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56671
ISSN: 00218979
DOI: 10.1063/1.1609638
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