Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1757022
Title: Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
Authors: Ng, T.H.
Chim, W.K. 
Choi, W.K. 
Ho, V.
Teo, L.W.
Du, A.Y.
Tung, C.H.
Issue Date: 31-May-2004
Source: Ng, T.H., Chim, W.K., Choi, W.K., Ho, V., Teo, L.W., Du, A.Y., Tung, C.H. (2004-05-31). Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric. Applied Physics Letters 84 (22) : 4385-4387. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1757022
Abstract: The penetration of Ge atoms into the silicon substrate with the help of trilayer structures, for devices with the smaller rapid thermal oxide (RTO) thickness was discussed. The trilayer structures consisted of a rapid thermal oxide (RTO) layer, a sputtered Ge middle layer and a 50-nm-thick sputtered silicon oxide capping layer. By replacing the RTO layer with a high dielectric constant silicon nitride/hafnium dioxide stack having a larger physical thickness, the Ge penetration was minimized. The results show that the high dielectric constant trilayer structure exhibited better charge retention and better charge storage capability performance than RTO trilayer structure.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56642
ISSN: 00036951
DOI: 10.1063/1.1757022
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

30
checked on Dec 5, 2017

WEB OF SCIENCETM
Citations

24
checked on Dec 5, 2017

Page view(s)

34
checked on Dec 11, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.