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|Title:||Micro-Raman and photoluminescence study on n-type 6H-SiC|
|Source:||Feng, Z.C.,Chua, S.J.,Evans, G.A.,Steeds, J.W.,Williams, K.P.J.,Pitt, G.D. (2001). Micro-Raman and photoluminescence study on n-type 6H-SiC. Materials Science Forum 353-356 : 345-348. ScholarBank@NUS Repository.|
|Abstract:||Combined UV Raman and photoluminescence (PL) measurements have been performed on a series on N-doped n-type 6H-SiC bulk wafers. The first order Raman transverse optical (TO) and longitudinal optical (LO) phone modes, the 2.9-eV near edge PL band, and the 2.2-eV defects-related band, can be detected at same runs at room temperature by using a high sensitive microscopic system. Their relative intensity ratios are varied with N-doping levels. Weak folded phonon modes and variations with N-dopings are observed, which might be related to the structural variation near the surface.|
|Source Title:||Materials Science Forum|
|Appears in Collections:||Staff Publications|
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