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|Title:||Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers|
|Citation:||Lim, A.E.-J., Hwang, W.S., Wang, X.P., Lai, D.M.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2007). Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers. Journal of the Electrochemical Society 154 (4) : H309-H313. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2437070|
|Abstract:||Metal-gate work function m modulation using Hf alloys was achieved by the interdiffusion of bilayer metallic films each with a thickness of less than or equal to 10 nm. For a bilayer stack comprising a Hf layer on a Ni layer, varying the HfNi metal thickness ratio from 0 (single-layer Ni stack) to 1.4 achieved m tunability from 4.74 to 4.2 eV after forming gas anneal (FGA) at 420°C. Interdiffusion in HfPt stack and PtPt-Hf stack was also explored, and the largest m shift of ∼0.5 eV from single-layer Pt and Pt-Hf stack, respectively, was obtained after annealing at 700°C for 30 s. The observed m shift correlated to the extent of metal interdiffusion and was found to be strongly dependent on the metal thickness and anneal temperature. The HfPt stack was further employed to demonstrate m tunability of thin interdiffused metal layers on HfO2 and HfLaOx high- k gate dielectrics. Through process optimization, the interdiffusion of thin metallic layers allows precise dual-gate m control for advanced transistors. © 2007 The Electrochemical Society.|
|Source Title:||Journal of the Electrochemical Society|
|Appears in Collections:||Staff Publications|
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