Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.72.174426
Title: Magnetoresistance behavior of nanoscale antidot arrays
Authors: Wang, C.C. 
Adeyeye, A.O. 
Singh, N.
Huang, Y.S.
Wu, Y.H. 
Issue Date: 1-Nov-2005
Source: Wang, C.C., Adeyeye, A.O., Singh, N., Huang, Y.S., Wu, Y.H. (2005-11-01). Magnetoresistance behavior of nanoscale antidot arrays. Physical Review B - Condensed Matter and Materials Physics 72 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.72.174426
Abstract: We investigate the transport properties of nanometer-scale Ni80Fe20 antidot arrays fabricated using deep ultraviolet lithography. Magnetotransport measurements have been shown as a powerful and sensitive technique in mapping the magnetization reversal process in complex magnetic structures. Compared with continuous film, a drastic increase in coercivity in the antidot structures due to local modification of the spin configurations was observed. We found that the current density distribution is periodically modulated by the presence of holes, which gives rise to the interesting high-field sloping behavior of the magnetoresistance (MR). The effect of antidot film thickness for fixed lateral geometry on the MR response was also investigated, and the reversal process was found to be strongly dependent on the antidot film thickness. Our experimental results were further verified by magnetic hysteresis measurements and micromagnetic simulations, which show good agreement with the experimental MR data. © 2005 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56572
ISSN: 10980121
DOI: 10.1103/PhysRevB.72.174426
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