Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2006.01.237
Title: Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors
Authors: Li, H.L.
Lin, H.T.
Wu, Y.H. 
Liu, T. 
Zhao, Z.L. 
Han, G.C.
Chong, T.C.
Keywords: Amorphous diluted magnetic semiconductors (DMSs)
Antiferromagentic coupling
Delta-doping
Ferromagnetic ordering
Issue Date: Aug-2006
Source: Li, H.L., Lin, H.T., Wu, Y.H., Liu, T., Zhao, Z.L., Han, G.C., Chong, T.C. (2006-08). Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors. Journal of Magnetism and Magnetic Materials 303 (2 SPEC. ISS.) : e318-e321. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2006.01.237
Abstract: We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature. © 2006 Elsevier B.V. All rights reserved.
Source Title: Journal of Magnetism and Magnetic Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/56544
ISSN: 03048853
DOI: 10.1016/j.jmmm.2006.01.237
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