Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1767829
Title: Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition
Authors: Chen, X.Y.
Lu, Y.F. 
Wu, Y.H. 
Cho, B.J. 
Yang, B.J.
Liew, T.Y.F. 
Issue Date: Jul-2004
Source: Chen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Yang, B.J., Liew, T.Y.F. (2004-07). Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 22 (4) : 1731-1737. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1767829
Abstract: The effects of laser annealing on the structures and properties of silicon nanocrystal films fabricated by pulsed laser deposition in inert argon gas were studied. The properties of the as-deposited large particles with size ranging from ∼100 nm to several μm on a uniform background films were analyzed. It was found that the strong photoluminescence (PL) was from the background film instead of the crystalline droplets. The consistency of the PL and crystal size from the background film was also found to support the quantum confinement effect theory. Nanoparticles with sizes ranging from 10-50 nm were found to be formed in the as deposited films after KrF excimer laser annealing.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/56459
ISSN: 10711023
DOI: 10.1116/1.1767829
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