Please use this identifier to cite or link to this item:
|Title:||Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method|
|Source:||Yiang, K.Y.,Yoo, W.J.,Guo, Q.,Krishnamoorthy, A. (2003-07-21). Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method. Applied Physics Letters 83 (3) : 524-526. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592618|
|Abstract:||Electron conduction in carbon-doped silicon oxide was discussed. Voltage ramp method was used in an electric field range of 0 MV/cm to the breakdown field at 300 K. Results showed the presence and role of electron traps in the conduction of SiOC.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 13, 2017
WEB OF SCIENCETM
checked on Nov 3, 2017
checked on Dec 9, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.