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https://doi.org/10.1063/1.1592618
| Title: | Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method | Authors: | Yiang, K.Y. Yoo, W.J. Guo, Q. Krishnamoorthy, A. |
Issue Date: | 21-Jul-2003 | Citation: | Yiang, K.Y., Yoo, W.J., Guo, Q., Krishnamoorthy, A. (2003-07-21). Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method. Applied Physics Letters 83 (3) : 524-526. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592618 | Abstract: | Electron conduction in carbon-doped silicon oxide was discussed. Voltage ramp method was used in an electric field range of 0 MV/cm to the breakdown field at 300 K. Results showed the presence and role of electron traps in the conduction of SiOC. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/56398 | ISSN: | 00036951 | DOI: | 10.1063/1.1592618 |
| Appears in Collections: | Staff Publications |
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