Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1592618
Title: Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method
Authors: Yiang, K.Y.
Yoo, W.J. 
Guo, Q.
Krishnamoorthy, A.
Issue Date: 21-Jul-2003
Source: Yiang, K.Y., Yoo, W.J., Guo, Q., Krishnamoorthy, A. (2003-07-21). Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method. Applied Physics Letters 83 (3) : 524-526. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592618
Abstract: Electron conduction in carbon-doped silicon oxide was discussed. Voltage ramp method was used in an electric field range of 0 MV/cm to the breakdown field at 300 K. Results showed the presence and role of electron traps in the conduction of SiOC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56398
ISSN: 00036951
DOI: 10.1063/1.1592618
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