Please use this identifier to cite or link to this item:
|Title:||Interference enhancement of Raman signal of graphene|
|Citation:||Wang, Y.Y., Ni, Z.H., Shen, Z.X., Wang, H.M., Wu, Y.H. (2008). Interference enhancement of Raman signal of graphene. Applied Physics Letters 92 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2838745|
|Abstract:||Raman spectroscopic studies of graphene have attracted much interest. The G -band Raman intensity of a single layer graphene on Si substrate with 300 nm SiO2 capping layer is surprisingly strong and is comparable to that of bulk graphite. To explain this Raman intensity anomaly, we show that in addition to the interference due to multiple reflection of the incident laser, the multiple reflection of the Raman signal inside the graphene layer must be also accounted for. Further studies of the role of SiO2 layer in the enhancement Raman signal of graphene are carried out and an enhancement factor of ∼30 is achievable, which is very significant for the Raman studies. Finally, we discuss the potential application of this enhancement effect on other ultrathin films and nanoflakes and a general selection criterion of capping layer and substrate is given. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 11, 2018
WEB OF SCIENCETM
checked on Oct 17, 2018
checked on Nov 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.