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|Title:||InGaNGaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates|
|Source:||Wang, L.S.,Tripathy, S.,Chua, S.J.,Zang, K.Y. (2005-09-12). InGaNGaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates. Applied Physics Letters 87 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2045562|
|Abstract:||We report growth of InGaNGaN multiple quantum wells (MQWs) on (111)-oriented bonded silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition (MOCVD). Prior to MOCVD growth of MQWs, about a 1.2 μm thick GaN layer was deposited on SOI substrate with a high-temperature transitional buffer layer. The growth conditions were tuned to realize blue-green emission peaks centered around 420-495 nm from such MQWs on SOI. X-ray diffraction, atomic force microscopy, scanning electronic microscopy, and photoluminescence techniques were used to characterize these MQWs. Such an approach to realize multicolor light-emitting layers on SOI substrates is suitable for the integration of InGaNGaN -based optoelectronic structures on SOI-based micro-optoelectromechanical systems and sensors. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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