Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2045562
Title: InGaNGaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates
Authors: Wang, L.S.
Tripathy, S.
Chua, S.J. 
Zang, K.Y.
Issue Date: 12-Sep-2005
Source: Wang, L.S.,Tripathy, S.,Chua, S.J.,Zang, K.Y. (2005-09-12). InGaNGaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates. Applied Physics Letters 87 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2045562
Abstract: We report growth of InGaNGaN multiple quantum wells (MQWs) on (111)-oriented bonded silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition (MOCVD). Prior to MOCVD growth of MQWs, about a 1.2 μm thick GaN layer was deposited on SOI substrate with a high-temperature transitional buffer layer. The growth conditions were tuned to realize blue-green emission peaks centered around 420-495 nm from such MQWs on SOI. X-ray diffraction, atomic force microscopy, scanning electronic microscopy, and photoluminescence techniques were used to characterize these MQWs. Such an approach to realize multicolor light-emitting layers on SOI substrates is suitable for the integration of InGaNGaN -based optoelectronic structures on SOI-based micro-optoelectromechanical systems and sensors. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56338
ISSN: 00036951
DOI: 10.1063/1.2045562
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