Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1433163
Title: InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
Authors: Zhang, J. 
Hao, M.
Li, P.
Chua, S.J. 
Issue Date: 21-Jan-2002
Source: Zhang, J., Hao, M., Li, P., Chua, S.J. (2002-01-21). InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant. Applied Physics Letters 80 (3) : 485-487. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1433163
Abstract: Nanometer-scale InGaN self-assembled quantum dots have been formed in an InGaN single-quantum-well structure on a (0001) sapphire substrate with In as the antisurfactant using low-pressure metalorganic chemical-vapor deposition. High-resolution transmission electron microscopy reveals that the average dimensions of InGaN nanometer-scale structures are as small as 4 nm wide and 1.5 nm high. Strong photoluminescence emission of the InGaN quantum dots was observed at room temperature with an emission peak of about 2.56 eV (485 nm) and a full width at half maximum of about 150 meV (30 nm). The choice of In as the antisurfactant also avoids the incorporation of foreign atoms in the active layers. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56337
ISSN: 00036951
DOI: 10.1063/1.1433163
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