Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2812565
Title: Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing
Authors: Liu, F.
Tan, K.-M.
Wang, X.
Low, D.K.Y.
Lai, D.M.Y.
Lim, P.C.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Source: Liu, F., Tan, K.-M., Wang, X., Low, D.K.Y., Lai, D.M.Y., Lim, P.C., Samudra, G., Yeo, Y.-C. (2007). Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing. Journal of Applied Physics 102 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2812565
Abstract: The supersaturated and metastable boron produced by laser anneal could deactivate during post-laser-thermal-cycles and lead to undesirable performance degradation. The effect of tin incorporation on the thermal stability of boron was studied for the first time and suppressed boron deactivation during post-laser-rapid-thermal-anneal was observed with tin coimplantation. High resolution x-ray diffraction measurement indicates that the tensile strain caused by a high boron concentration was reduced by the introduction of tin, which effectively reduces the strain energy and therefore, enhances the thermal stability of boron in post-laser-anneal rapid thermal processing. © 2007 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56306
ISSN: 00218979
DOI: 10.1063/1.2812565
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