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|Title:||Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing|
|Citation:||Liu, F., Tan, K.-M., Wang, X., Low, D.K.Y., Lai, D.M.Y., Lim, P.C., Samudra, G., Yeo, Y.-C. (2007). Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing. Journal of Applied Physics 102 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2812565|
|Abstract:||The supersaturated and metastable boron produced by laser anneal could deactivate during post-laser-thermal-cycles and lead to undesirable performance degradation. The effect of tin incorporation on the thermal stability of boron was studied for the first time and suppressed boron deactivation during post-laser-rapid-thermal-anneal was observed with tin coimplantation. High resolution x-ray diffraction measurement indicates that the tensile strain caused by a high boron concentration was reduced by the introduction of tin, which effectively reduces the strain energy and therefore, enhances the thermal stability of boron in post-laser-anneal rapid thermal processing. © 2007 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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