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|Title:||Impact of interfacial layer control using Gd2 O3 in Hf O2 gate dielectric on GaAs|
|Citation:||Dalapati, G.K., Tong, Y., Loh, W.Y., Mun, H.K., Cho, B.J. (2007). Impact of interfacial layer control using Gd2 O3 in Hf O2 gate dielectric on GaAs. Applied Physics Letters 90 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2732821|
|Abstract:||Structural and electrical properties of Hf O2 and Hf O2 Gd2 O3 gate stacks on p-GaAs substrates have been investigated. It has been demonstrated that the presence of thin layer of Gd2 O3 between Hf O2 and GaAs improves metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and leakage current. It is also found that Hf O2 Gd2 O3 stack can reduce the interfacial GaAs-oxide formation, thus reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion significantly improves the electrical properties of the dielectric stacks. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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