Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2732821
Title: Impact of interfacial layer control using Gd2 O3 in Hf O2 gate dielectric on GaAs
Authors: Dalapati, G.K.
Tong, Y.
Loh, W.Y.
Mun, H.K.
Cho, B.J. 
Issue Date: 2007
Source: Dalapati, G.K., Tong, Y., Loh, W.Y., Mun, H.K., Cho, B.J. (2007). Impact of interfacial layer control using Gd2 O3 in Hf O2 gate dielectric on GaAs. Applied Physics Letters 90 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2732821
Abstract: Structural and electrical properties of Hf O2 and Hf O2 Gd2 O3 gate stacks on p-GaAs substrates have been investigated. It has been demonstrated that the presence of thin layer of Gd2 O3 between Hf O2 and GaAs improves metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and leakage current. It is also found that Hf O2 Gd2 O3 stack can reduce the interfacial GaAs-oxide formation, thus reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion significantly improves the electrical properties of the dielectric stacks. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56265
ISSN: 00036951
DOI: 10.1063/1.2732821
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

59
checked on Dec 7, 2017

WEB OF SCIENCETM
Citations

51
checked on Nov 22, 2017

Page view(s)

26
checked on Dec 11, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.