Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2267663
Title: High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing
Authors: Wang, G.H.
Toh, E.-H.
Foo, Y.-L.
Tung, C.-H.
Choy, S.-F.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2006
Source: Wang, G.H., Toh, E.-H., Foo, Y.-L., Tung, C.-H., Choy, S.-F., Samudra, G., Yeo, Y.-C. (2006). High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing. Applied Physics Letters 89 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2267663
Abstract: An improved fabrication scheme for forming strained SiGe on insulator (SGOI) is demonstrated. Cyclical thermal oxidation and annealing (CTOA) process is introduced to mitigate issues associated with surface roughening and nonuniformity due to increased germanium (Ge) content during SiGe oxidation. Annealing in an inert ambient can be introduced between each oxidation phase to homogenize the Ge content. The root-mean-square surface roughness of the SGOI layer is evaluated to be 0.41 nm. With CTOA, a high quality SGOI substrate is obtained. This technique is promising for the fabrication of dislocation-free SGOI layers for applications in high mobility metal-oxide-semiconductor field-effect transistors. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56193
ISSN: 00036951
DOI: 10.1063/1.2267663
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