Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2792344
Title: High quality GaN grown from a nanoporous GaN template
Authors: Hartono, H.
Soh, C.B.
Chua, S.J. 
Fitzgerald, E.A.
Issue Date: 2007
Citation: Hartono, H., Soh, C.B., Chua, S.J., Fitzgerald, E.A. (2007). High quality GaN grown from a nanoporous GaN template. Journal of the Electrochemical Society 154 (12) : H1004-H1007. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2792344
Abstract: High density porous GaN has been fabricated by UV-enhanced electrochemical etching on Si-doped GaN layer grown by metallorganic chemical vapor deposition. A redshift from 0.7 to 567.7 cm-1 in the E2 (high) phonon peak of GaN was observed in this porous GaN with respect to as-grown GaN. As the phonon peak of a stress-free GaN is observed at 567.5 cm-1, it means that the fabricated porous GaN is almost stress free. GaN overgrown on this porous template showed nearly doubled photoluminescence intensity as compared to that overgrown on as-grown GaN, with average surface roughness which differs only by 0.04 nm for the same thickness. This method is simple and inexpensive even for large area porous GaN fabrication and is useful for template of GaN and its alloys growth. © 2007 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/56192
ISSN: 00134651
DOI: 10.1149/1.2792344
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