Please use this identifier to cite or link to this item: https://doi.org/36/365204
Title: High and tunable spin current induced by magnetic-electric fields in a single-mode spintronic device
Authors: Bala Kumar, S. 
Tan, S.G.
Jalil, M.B.A. 
Liang, G.-C.
Issue Date: 9-Sep-2009
Source: Bala Kumar, S.,Tan, S.G.,Jalil, M.B.A.,Liang, G.-C. (2009-09-09). High and tunable spin current induced by magnetic-electric fields in a single-mode spintronic device. Nanotechnology 20 (36) : -. ScholarBank@NUS Repository. https://doi.org/36/365204
Abstract: We proposed that a viable form of spin current transistor is one to be made from a single-mode device which passes electrons through a series of magnetic-electric barriers built into the device. The barriers assume a wavy spatial profile across the conduction path due to the inevitable broadening of the magnetic fields. Field broadening results in a linearly increasing vector potential across the conduction channel, which increases spin polarization. We have identified that the important factors for generating high spin polarization and conductance modulation are the low source-drain bias, the broadened magnetic fields, and the high number of FM gates within a fixed channel length. © 2009 IOP Publishing Ltd.
Source Title: Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/56185
ISSN: 09574484
DOI: 36/365204
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