Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2912829
Title: Greatly enhanced optical properties of ZnO nanorods grown on GaN in aqueous solution by using two-step treatment method
Authors: Quang, L.H.
Jin, C.S. 
Issue Date: 2008
Source: Quang, L.H., Jin, C.S. (2008). Greatly enhanced optical properties of ZnO nanorods grown on GaN in aqueous solution by using two-step treatment method. Journal of the Electrochemical Society 155 (7) : K105-K109. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2912829
Abstract: ZnO nanorods with good optical properties were synthesized on GaN film by combining the lowerature growth aqueous solution method and the two-step postgrowth treatment method (thermal annealing and nitrogen plasma treatment). The photoluminescence results at room temperature showed that the nitrogen plasma treated ZnO nanorods exhibited a strong UV emission peak with negligible deep level emission peak compared to that of nonplasma-treated samples. The plasma-treated nanorods also exhibited strong stimulated emission with a threshold of 4.16 MW cm2 at room temperature. No stimulated emission was observed in the as-grown and thermal annealed nanorods. The X-ray photoelectron spectroscopy confirmed the incorporation of nitrogen ions into the ZnO nanorods. These ions may diffuse through surface adsorption or defect routes. In addition, nitrogen incorporation also offers a prospective way to produce ZnO nanorods with p-type conductivity or compensate the n-type conductivity. The current-voltage measurements showed the rectifying behavior with a small threshold voltage. © 2008 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/56160
ISSN: 00134651
DOI: 10.1149/1.2912829
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