Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.841462

Title:	Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
Authors:	Zhu, S. Li, R. Lee, S.J. Li, M.F. Du, A. Singh, J. Zhu, C. Chin, A. Kwong, D.L.
Keywords:	Germanium High-Κ Metal gate MOSFET Schottky
Issue Date:	Feb-2005
Citation:	Zhu, S., Li, R., Lee, S.J., Li, M.F., Du, A., Singh, J., Zhu, C., Chin, A., Kwong, D.L. (2005-02). Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate. IEEE Electron Device Letters 26 (2) : 81-83. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.841462
Abstract:	Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as ∼5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si. © 2005 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/56137
ISSN:	07413106
DOI:	10.1109/LED.2004.841462
Appears in Collections:	Staff Publications

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