Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssa.201228643
Title: Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method
Authors: Sang, N.X.
Beng, T.C.
Jie, T.
Fitzgerald, E.A.
Jin, C.S. 
Keywords: GaN
heterojunctions
light-emitting diodes
nanorods
solution deposition
ZnO
Issue Date: Aug-2013
Source: Sang, N.X., Beng, T.C., Jie, T., Fitzgerald, E.A., Jin, C.S. (2013-08). Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method. Physica Status Solidi (A) Applications and Materials Science 210 (8) : 1618-1623. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.201228643
Abstract: Zinc oxide (ZnO) is a wide-bandgap material with excellent optical properties for optoelectronics applications. ZnO nanostructures are attractive for research because it is easy to fabricate in single-crystalline form and it has interesting physical properties at the nanoscale. In this paper, we report our successful growth of a p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diode (LED). The heterojunction LED shows its advantages over a p-ZnO film/n-GaN film heterojunction. The LED demonstrates a rectifying I-V characteristics with a turn-on voltage of 2.7 V. The ideality factor is 6.5. The existences of interface charges in the interface are the reason for this low turn-on voltage and high ideality factor in the heterojunction. Electroluminescence (EL) spectra of the LED consist of an ultraviolet peak at 378 nm and a broad yellow emission centered at 560 nm. Fitting and comparing EL of the LED with PL of p-ZnO and n-GaN show that p-ZnO contributes more to the EL than n-GaN. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi (A) Applications and Materials Science
URI: http://scholarbank.nus.edu.sg/handle/10635/55990
ISSN: 18626300
DOI: 10.1002/pssa.201228643
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