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|Title:||Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method|
|Citation:||Sang, N.X., Beng, T.C., Jie, T., Fitzgerald, E.A., Jin, C.S. (2013-08). Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method. Physica Status Solidi (A) Applications and Materials Science 210 (8) : 1618-1623. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.201228643|
|Abstract:||Zinc oxide (ZnO) is a wide-bandgap material with excellent optical properties for optoelectronics applications. ZnO nanostructures are attractive for research because it is easy to fabricate in single-crystalline form and it has interesting physical properties at the nanoscale. In this paper, we report our successful growth of a p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diode (LED). The heterojunction LED shows its advantages over a p-ZnO film/n-GaN film heterojunction. The LED demonstrates a rectifying I-V characteristics with a turn-on voltage of 2.7 V. The ideality factor is 6.5. The existences of interface charges in the interface are the reason for this low turn-on voltage and high ideality factor in the heterojunction. Electroluminescence (EL) spectra of the LED consist of an ultraviolet peak at 378 nm and a broad yellow emission centered at 560 nm. Fitting and comparing EL of the LED with PL of p-ZnO and n-GaN show that p-ZnO contributes more to the EL than n-GaN. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.|
|Source Title:||Physica Status Solidi (A) Applications and Materials Science|
|Appears in Collections:||Staff Publications|
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