Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1773914

Title:	Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method
Authors:	Chia, C.K. Chua, S.J. Miao, Z.L. Chye, Y.H.
Issue Date:	26-Jul-2004
Citation:	Chia, C.K., Chua, S.J., Miao, Z.L., Chye, Y.H. (2004-07-26). Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method. Applied Physics Letters 85 (4) : 567-569. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1773914
Abstract:	Enhanced photoluminescence (PL) of InAs self-assembled quantum dots (SAQD) structures grown by molecular beam epitaxy (MBE) were investigated. It was shown that the initial 1.8 monolayers (ML) nucleation layer grown at a faster growth rate helped to increase the dot density, resulting in a higher PL intensity. The PL emission wavelength of the InAs QDs redshifted with the reduction in the effective growth rate of the InAs augmented layer. The changes in characteristics were found to be due to improved optical quality and greater dot density.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/55886
ISSN:	00036951
DOI:	10.1063/1.1773914
Appears in Collections:	Staff Publications

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