Please use this identifier to cite or link to this item:
Title: Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials
Authors: Wang, W.
Loke, D.
Shi, L.
Zhao, R.
Yang, H.
Law, L.-T.
Ng, L.-T.
Lim, K.-G.
Yeo, Y.-C. 
Chong, T.-C.
Lacaita, A.L.
Issue Date: 2012
Source: Wang, W., Loke, D., Shi, L., Zhao, R., Yang, H., Law, L.-T., Ng, L.-T., Lim, K.-G., Yeo, Y.-C., Chong, T.-C., Lacaita, A.L. (2012). Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials. Scientific Reports 2 : -. ScholarBank@NUS Repository.
Abstract: The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation-or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.
Source Title: Scientific Reports
ISSN: 20452322
DOI: 10.1038/srep00360
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Mar 7, 2018


checked on Jan 30, 2018

Page view(s)

checked on Mar 11, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.