Please use this identifier to cite or link to this item:
|Title:||Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbon|
|Source:||Lam, K.-T., Yang, Y., Samudra, G.S., Yeo, Y.-C., Liang, G. (2011-04). Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbon. IEEE Electron Device Letters 32 (4) : 431-433. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2103372|
|Abstract:||The effect of 2-D electrostatic environment on the device performance of ultimately thin-body tunneling field-effect transistors (UTB-TFETs) using graphene nanoribbons (GNRs) is investigated by varying the gate-oxide thickness and insulating material with different dielectric constants (k). Compared to Si TFETs with different body thicknesses, the atomic-layer-thick structure enhances the lateral fringing fields at the sourcechannel interface, resulting in a lower on-state current in GNR TFETs with high-k oxide as compared to the low-k variant of the same thickness. Low-k spacers are therefore essential to counter this effect and reap the benefits of high-k dielectrics in improving the device performance of UTB-TFETs. © 2011 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 7, 2018
WEB OF SCIENCETM
checked on Jan 30, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.