Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2103372
Title: Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbon
Authors: Lam, K.-T.
Yang, Y.
Samudra, G.S. 
Yeo, Y.-C. 
Liang, G. 
Keywords: Electrostatics
graphene
tunneling transistors
Issue Date: Apr-2011
Source: Lam, K.-T., Yang, Y., Samudra, G.S., Yeo, Y.-C., Liang, G. (2011-04). Electrostatics of ultimately thin-body tunneling FET Using graphene nanoribbon. IEEE Electron Device Letters 32 (4) : 431-433. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2103372
Abstract: The effect of 2-D electrostatic environment on the device performance of ultimately thin-body tunneling field-effect transistors (UTB-TFETs) using graphene nanoribbons (GNRs) is investigated by varying the gate-oxide thickness and insulating material with different dielectric constants (k). Compared to Si TFETs with different body thicknesses, the atomic-layer-thick structure enhances the lateral fringing fields at the sourcechannel interface, resulting in a lower on-state current in GNR TFETs with high-k oxide as compared to the low-k variant of the same thickness. Low-k spacers are therefore essential to counter this effect and reap the benefits of high-k dielectrics in improving the device performance of UTB-TFETs. © 2011 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55856
ISSN: 07413106
DOI: 10.1109/LED.2010.2103372
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