Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2840713
Title: Electronic transport and layer engineering in multilayer graphene structures
Authors: Wang, H.M.
Wu, Y.H. 
Ni, Z.H.
Shen, Z.X.
Issue Date: 2008
Source: Wang, H.M., Wu, Y.H., Ni, Z.H., Shen, Z.X. (2008). Electronic transport and layer engineering in multilayer graphene structures. Applied Physics Letters 92 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2840713
Abstract: We demonstrate a reproducible layer engineering technique for multilayer graphene through controllable oxidation via a Si O2 capping layer. The oxidation method is able to reduce the thickness of few layer graphene to a single layer, as determined by a combination of contrast and Raman spectroscopies. We have also studied the electrical transport properties of graphene sheets with different thicknesses by focusing on their minimum conductivity. The average minimum conductivity of single layer graphene was found to be 0.3×4 e2 h, while that of multilayer graphene consisting of n layers is approximately 1.2×4 e2 h for n=2, 2.4×4 e2 h for n=3, and 4n e2 h for n>3. The results suggest that the substrate plays an important role in determining the transport properties of thin graphene sheets with n<3, while its influence is relatively small in thicker graphene sheets. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55855
ISSN: 00036951
DOI: 10.1063/1.2840713
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