Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.855420
Title: Electron mobility enhancement using ultrathin pure Ge on Si substrate
Authors: Yeo, C.C.
Cho, B.J. 
Gao, F.
Lee, S.J. 
Lee, M.H.
Yu, C.-Y.
Liu, C.W.
Tang, L.J.
Lee, T.W.
Keywords: Effective electron mobility
Ge
High-K gate dielectric
Issue Date: Oct-2005
Citation: Yeo, C.C., Cho, B.J., Gao, F., Lee, S.J., Lee, M.H., Yu, C.-Y., Liu, C.W., Tang, L.J., Lee, T.W. (2005-10). Electron mobility enhancement using ultrathin pure Ge on Si substrate. IEEE Electron Device Letters 26 (10) : 761-763. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.855420
Abstract: We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55851
ISSN: 07413106
DOI: 10.1109/LED.2005.855420
Appears in Collections:Staff Publications

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