Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0026-2714(01)00172-X
Title: Electric passivation of interface traps at drain junction space charge region in p-MOS transistors
Authors: Chen, G. 
Li, M.F. 
Jin, Y.
Issue Date: Sep-2001
Source: Chen, G., Li, M.F., Jin, Y. (2001-09). Electric passivation of interface traps at drain junction space charge region in p-MOS transistors. Microelectronics Reliability 41 (9-10) : 1427-1431. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2714(01)00172-X
Abstract: Hot carrier (HC) induced interface trap passivation and migration at the drain junction space charge (JSC) region during FN stresses in p-MOS transistors (p-MOST's) was observed for the first time. This is explained by the processes that hydrogen atoms are released from the basewell channel (BC) region, transport to the JSC region and recombine with the dangling silicon bonds. A three-cell difference model of the hydrogen release and absorption was used to interpret this phenomenon. The effect is important in predicting the hot carrier degradation and lifetime projection of MOS transistors. © 2001 Elsevier Science Ltd. All rights reserved.
Source Title: Microelectronics Reliability
URI: http://scholarbank.nus.edu.sg/handle/10635/55812
ISSN: 00262714
DOI: 10.1016/S0026-2714(01)00172-X
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