Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2714315
Title: Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects
Authors: Chang, C.W.
Thompson, C.V.
Gan, C.L.
Pey, K.L.
Choi, W.K. 
Lim, Y.K.
Issue Date: 2007
Citation: Chang, C.W., Thompson, C.V., Gan, C.L., Pey, K.L., Choi, W.K., Lim, Y.K. (2007). Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects. Applied Physics Letters 90 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2714315
Abstract: The electromigration lifetime of dual-damascene Cu interconnects was found to significantly decrease with increasing linewidth, for linewidths ranging between 0.2 and 2.25 μm. Voids were also found to preexist in these lines. When void nucleation is required for failure, the electromigration reliability is generally found to be at most weakly dependent on the linewidth. In contrast, the current study suggests that growth, drift, and accumulation of existing voids lead to the observed strong linewidth dependence. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55778
ISSN: 00036951
DOI: 10.1063/1.2714315
Appears in Collections:Staff Publications

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