Please use this identifier to cite or link to this item:
|Title:||Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects|
|Source:||Chang, C.W., Thompson, C.V., Gan, C.L., Pey, K.L., Choi, W.K., Lim, Y.K. (2007). Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects. Applied Physics Letters 90 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2714315|
|Abstract:||The electromigration lifetime of dual-damascene Cu interconnects was found to significantly decrease with increasing linewidth, for linewidths ranging between 0.2 and 2.25 μm. Voids were also found to preexist in these lines. When void nucleation is required for failure, the electromigration reliability is generally found to be at most weakly dependent on the linewidth. In contrast, the current study suggests that growth, drift, and accumulation of existing voids lead to the observed strong linewidth dependence. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 14, 2017
WEB OF SCIENCETM
checked on Nov 17, 2017
checked on Dec 10, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.