Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2714315
Title: Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects
Authors: Chang, C.W.
Thompson, C.V.
Gan, C.L.
Pey, K.L.
Choi, W.K. 
Lim, Y.K.
Issue Date: 2007
Source: Chang, C.W., Thompson, C.V., Gan, C.L., Pey, K.L., Choi, W.K., Lim, Y.K. (2007). Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects. Applied Physics Letters 90 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2714315
Abstract: The electromigration lifetime of dual-damascene Cu interconnects was found to significantly decrease with increasing linewidth, for linewidths ranging between 0.2 and 2.25 μm. Voids were also found to preexist in these lines. When void nucleation is required for failure, the electromigration reliability is generally found to be at most weakly dependent on the linewidth. In contrast, the current study suggests that growth, drift, and accumulation of existing voids lead to the observed strong linewidth dependence. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55778
ISSN: 00036951
DOI: 10.1063/1.2714315
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

16
checked on Dec 14, 2017

WEB OF SCIENCETM
Citations

14
checked on Nov 17, 2017

Page view(s)

21
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.