Please use this identifier to cite or link to this item:
|Title:||Effects of annealing on the valence band offsets between hafnium aluminate and silicon|
|Citation:||Chiam, S.Y., Chim, W.K., Ren, Y., Pi, C., Pan, J.S., Huan, A.C.H., Wang, S.J., Zhang, J. (2008). Effects of annealing on the valence band offsets between hafnium aluminate and silicon. Journal of Applied Physics 104 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2982085|
|Abstract:||In this work, we examine the valence band offset of hafnium aluminate (HfAlO), a material of interest for use as a high dielectric constant (high- k) gate oxide, following postdeposition annealing. It is observed that annealing leads to a change in the band offset between the high- k oxide and the semiconductor. Our results conclusively show that the change is due to the existence of an electrostatic dipole field at the interface between HfAlO and the silicon substrate. This provides evidence to partly account for the observed flatband voltage shifts in high- k dielectric stack structures in the literature. The origin of the dipole field is also discussed in terms of the interfacial permittivity. © 2008 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 17, 2018
WEB OF SCIENCETM
checked on Oct 9, 2018
checked on Sep 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.