Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2005.03.195

Title:	Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN
Authors:	Wang, X.C. Lim, G.C. Liu, W. Soh, C.B. Chua, S.J.
Keywords:	248 nm KrF excimer laser Electrical property Laser-induced activation Mg-doped GaN Optical property
Issue Date:	15-Dec-2005
Citation:	Wang, X.C., Lim, G.C., Liu, W., Soh, C.B., Chua, S.J. (2005-12-15). Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN. Applied Surface Science 252 (5) : 2071-2077. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2005.03.195
Abstract:	The effects of 248 nm KrF excimer laser irradiation on the properties of Mg-doped GaN film were investigated. The laser irradiation-induced property changes were studied by photoluminescence, I-V, C-V, DLTS, AFM measurements. It was found that under appropriate laser conditions, 248 nm KrF excimer laser irradiation could significantly increase the PL intensity of Mg-doped GaN film. The electrical properties (hole concentration and conductivity) were also improved by laser irradiation. From DLTS results, the hole-trap level appeared to have been effectively eliminated by laser treatment. The process has potential applications in the fabrication of GaN-based electronic and opto-electronic devices. © 2005 Elsevier B.V. All rights reserved.
Source Title:	Applied Surface Science
URI:	http://scholarbank.nus.edu.sg/handle/10635/55768
ISSN:	01694332
DOI:	10.1016/j.apsusc.2005.03.195
Appears in Collections:	Staff Publications

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