Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2005.03.195
Title: Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN
Authors: Wang, X.C.
Lim, G.C.
Liu, W.
Soh, C.B.
Chua, S.J. 
Keywords: 248 nm KrF excimer laser
Electrical property
Laser-induced activation
Mg-doped GaN
Optical property
Issue Date: 15-Dec-2005
Source: Wang, X.C., Lim, G.C., Liu, W., Soh, C.B., Chua, S.J. (2005-12-15). Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN. Applied Surface Science 252 (5) : 2071-2077. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2005.03.195
Abstract: The effects of 248 nm KrF excimer laser irradiation on the properties of Mg-doped GaN film were investigated. The laser irradiation-induced property changes were studied by photoluminescence, I-V, C-V, DLTS, AFM measurements. It was found that under appropriate laser conditions, 248 nm KrF excimer laser irradiation could significantly increase the PL intensity of Mg-doped GaN film. The electrical properties (hole concentration and conductivity) were also improved by laser irradiation. From DLTS results, the hole-trap level appeared to have been effectively eliminated by laser treatment. The process has potential applications in the fabrication of GaN-based electronic and opto-electronic devices. © 2005 Elsevier B.V. All rights reserved.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/55768
ISSN: 01694332
DOI: 10.1016/j.apsusc.2005.03.195
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