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|Title:||Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN|
|Keywords:||248 nm KrF excimer laser|
|Citation:||Wang, X.C., Lim, G.C., Liu, W., Soh, C.B., Chua, S.J. (2005-12-15). Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN. Applied Surface Science 252 (5) : 2071-2077. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2005.03.195|
|Abstract:||The effects of 248 nm KrF excimer laser irradiation on the properties of Mg-doped GaN film were investigated. The laser irradiation-induced property changes were studied by photoluminescence, I-V, C-V, DLTS, AFM measurements. It was found that under appropriate laser conditions, 248 nm KrF excimer laser irradiation could significantly increase the PL intensity of Mg-doped GaN film. The electrical properties (hole concentration and conductivity) were also improved by laser irradiation. From DLTS results, the hole-trap level appeared to have been effectively eliminated by laser treatment. The process has potential applications in the fabrication of GaN-based electronic and opto-electronic devices. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Applied Surface Science|
|Appears in Collections:||Staff Publications|
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