Please use this identifier to cite or link to this item:
|Title:||Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN|
|Keywords:||248 nm KrF excimer laser|
|Citation:||Wang, X.C., Lim, G.C., Liu, W., Soh, C.B., Chua, S.J. (2005-12-15). Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN. Applied Surface Science 252 (5) : 2071-2077. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2005.03.195|
|Abstract:||The effects of 248 nm KrF excimer laser irradiation on the properties of Mg-doped GaN film were investigated. The laser irradiation-induced property changes were studied by photoluminescence, I-V, C-V, DLTS, AFM measurements. It was found that under appropriate laser conditions, 248 nm KrF excimer laser irradiation could significantly increase the PL intensity of Mg-doped GaN film. The electrical properties (hole concentration and conductivity) were also improved by laser irradiation. From DLTS results, the hole-trap level appeared to have been effectively eliminated by laser treatment. The process has potential applications in the fabrication of GaN-based electronic and opto-electronic devices. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Applied Surface Science|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 23, 2019
WEB OF SCIENCETM
checked on Feb 13, 2019
checked on Feb 9, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.